ISC 2N6044

Inchange Semiconductor
Product Specification
2N6043 2N6044 2N6045
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・Complement to type 2N6040/6041/6042
・DARLINGTON
・High DC current gain
・Low collector saturation voltage
・
APPLICATIONS
・For general-purpose amplifier and
low-speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
体
导
电半
Absolute maximum ratings(Tc=25℃)
固
SYMBOL
VCBO
VCEO
PARAMETER
CONDITIONS
N
O
C
I
2N6043
M
E
S
NG
Collector-base voltage
CHA
IN
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
2N6044
Open emitter
2N6045
2N6043
2N6044
Open base
2N6045
R
O
T
DUC
VALUE
UNIT
60
80
V
100
60
80
V
100
Open collector
5
V
Collector current-DC
8
A
ICM
Collector current-Peak
16
A
IB
Base current-DC
120
mA
PD
Total power dissipation
TC=25℃
75
Ta=25℃
2.2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
VALUE
UNIT
1.67
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6043 2N6044 2N6045
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N6043
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6044
VCEsat-1
VCEsat-2
MAX
UNIT
60
IC=30mA, IB=0
V
80
2N6045
Collector-emitter
saturation voltage
TYP.
100
2N6043/6044
IC=4A ,IB=16mA
2N6045
IC=3A ,IB=12mA
2.0
V
Collector-emitter saturation voltage
IC=8A ,IB=80mA
4.0
V
Base-emitter saturation voltage
IC=8A ,IB=80mA
4.5
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
2.8
V
ICBO
Collector cut-off current
VCB=Rated VCB, IE=0
20
μA
VBEsat
ICEO
ICEO
体
导
电半
Collector cut-off current
VCE=RatedVCE, VBE=-1.5V
TC=150℃
Collector cut-off current
VCE=Rated VCE, IB=0
固
IEBO
Emitter cut-off current
hFE-1
DC current gain
G
N
A
CH
IN
2N6043/6044
2N6045
R
O
T
UC
D
N
O
IC
SEM
VEB=5V; IC=0
20
200
μA
20
μA
2.0
mA
IC=4A ; VCE=4V
1000
20000
IC=3A ; VCE=4V
hFE-2
DC current gain
IC=8A ; VCE=4V
Cob
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
2
100
200
pF
Inchange Semiconductor
Product Specification
2N6043 2N6044 2N6045
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
Fig.2 Outline dimensions
3
R
O
T
DUC