Inchange Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6040/6041/6042 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・ APPLICATIONS ・For general-purpose amplifier and low-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 体 导 电半 Absolute maximum ratings(Tc=25℃) 固 SYMBOL VCBO VCEO PARAMETER CONDITIONS N O C I 2N6043 M E S NG Collector-base voltage CHA IN Collector-emitter voltage VEBO Emitter-base voltage IC 2N6044 Open emitter 2N6045 2N6043 2N6044 Open base 2N6045 R O T DUC VALUE UNIT 60 80 V 100 60 80 V 100 Open collector 5 V Collector current-DC 8 A ICM Collector current-Peak 16 A IB Base current-DC 120 mA PD Total power dissipation TC=25℃ 75 Ta=25℃ 2.2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1.67 ℃/W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2N6043 VCEO(SUS) Collector-emitter sustaining voltage 2N6044 VCEsat-1 VCEsat-2 MAX UNIT 60 IC=30mA, IB=0 V 80 2N6045 Collector-emitter saturation voltage TYP. 100 2N6043/6044 IC=4A ,IB=16mA 2N6045 IC=3A ,IB=12mA 2.0 V Collector-emitter saturation voltage IC=8A ,IB=80mA 4.0 V Base-emitter saturation voltage IC=8A ,IB=80mA 4.5 V VBE Base-emitter on voltage IC=4A ; VCE=4V 2.8 V ICBO Collector cut-off current VCB=Rated VCB, IE=0 20 μA VBEsat ICEO ICEO 体 导 电半 Collector cut-off current VCE=RatedVCE, VBE=-1.5V TC=150℃ Collector cut-off current VCE=Rated VCE, IB=0 固 IEBO Emitter cut-off current hFE-1 DC current gain G N A CH IN 2N6043/6044 2N6045 R O T UC D N O IC SEM VEB=5V; IC=0 20 200 μA 20 μA 2.0 mA IC=4A ; VCE=4V 1000 20000 IC=3A ; VCE=4V hFE-2 DC current gain IC=8A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V,f=0.1MHz 2 100 200 pF Inchange Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA Fig.2 Outline dimensions 3 R O T DUC