Product Specification www.jmnic.com 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6298 VCBO Collector-base voltage 60 Open base 2N6299 VEBO V 80 2N6298 Collector-emitter voltage Emitter-base voltage UNIT 60 Open emitter 2N6299 VCEO VALUE V 80 Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 0.12 A PT Total power dissipation 75 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 2.33 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case JMnic Product Specification www.jmnic.com 2N6298 2N6299 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS 2N6298 MIN TYP. MAX UNIT 60 IC=0.1A ; IB=0 2N6299 V 80 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=16mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=80mA 3.0 V Base-emitter saturation voltage IC=8A; IB=80mA 4.0 V Base -emitter on voltage IC=4A ; VCE=3V 2.8 V VCE=60V; VBE(off)=1.5V TC=150℃ VCE=80V; VBE(off)=1.5V TC=150℃ 0.5 5.0 0.5 5.0 mA 0.5 mA 2.0 mA VBEsat VBE 2N6298 ICEX Collector cut-off current 2N6299 ICEO 2N6298 VCE=30V; IB=0 2N6299 VCE=40V; IB=0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=4A ; VCE=3V 750 hFE-2 DC current gain IC=8A ; VCE=3V 100 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz JMnic 18000 300 pF Product Specification www.jmnic.com 2N6298 2N6299 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic