SavantIC Semiconductor Product Specification MJF122 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type MJF127 APPLICATIONS ·Designed for general–purpose amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current-DC 5 A ICM Collector current-Pulse 8 A IB Base current-DC 120 mA PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification MJF122 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A, IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=3A ,IB=12mA 2.0 V VCE(sat)-2 Collector-emitter saturation voltage IC=5A ,IB=20mA 3.5 V VBE Base-emitter on voltage IC=3.0A ; VCE=3V 2.5 V ICBO Collector cut-off current VCB=100V, IE=0 10 µA ICEO Collector cut-off current VCE=50V, IB=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=0.5A ; VCE=3V 1000 hFE-2 DC current gain IC=3.0A ; VCE=3V 2000 COB Output capacitance IE=0 ; VCB=10V,f=0.1MHz 200 pF 2 MIN TYP. MAX 100 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 MJF122