SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N6037 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6038 Open emitter 60 2N6039 80 2N6037 40 2N6038 Emitter-base voltage UNIT 40 Open base 2N6039 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 4 A ICM Collector current-peak 8 A IB Base current 0.1 A PD Total Power Dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6037 VCEO(SUS) Collector-emitter sustaining voltage 2N6038 MIN TYP. MAX UNIT 40 IC=0.1A ;IB=0 V 60 80 2N6039 VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=8mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=4A; IB=40mA 3.0 V Base-emitter saturation voltage IC=4A; IB=40mA 4.0 V VBE Base-emitter on voltage IC=2A ; VCE=3V 2.8 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 0.1 mA ICEX Collector cut-off current VCE=Rated VCEO; VBE(off)=1.5V TC=125 0.1 0.5 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 2.0 mA hFE-1 DC current gain IC=0.5A ; VCE=3V 500 hFE-2 DC current gain IC=2A ; VCE=3V 750 hFE-3 DC current gain IC=4A ; VCE=3V 100 COB Output capacitance IE=0;VCB=10V;f=0.1MHz VBEsat 2 15000 100 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2N6037 2N6038 2N6039