ISC 2N6371

Inchange Semiconductor
Product Specification
2N6371
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・High dissipation capability
・Excellent safe operating area
APPLICATIONS
・Series and shunt regulators
・High-fidelity amplifiers
・Power-switching circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
50
V
VCEO
Collector-emitter voltage
Open base
40
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
7
A
PD
Total Power Dissipation
117
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6371
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=8A ;IB=0.8A
1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=16A; IB=4A
4.0
V
VBE
Base-emitter on voltage
IC=16A ; VCE=4V
4.0
V
ICEO
Collector cut-off current
VCE=25V; IB=0
1.5
mA
ICEX
Collector cut-off current
VCE=45V;VBE(off)=1.5V
VCE=40V;VBE(off)=1.5V;TC=150℃
2.0
10.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
mA
hFE-1
DC current gain
IC=8A ; VCE=4V
15
hFE-2
DC current gain
IC=16A ; VCE=4V
4
Transition freuqency
IC=1A ; VCE=4V
fT
CONDITIONS
2
MIN
TYP.
MAX
40
UNIT
V
60
0.8
MHz
Inchange Semiconductor
Product Specification
2N6371
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3