Inchange Semiconductor Product Specification 2N6371 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High dissipation capability ・Excellent safe operating area APPLICATIONS ・Series and shunt regulators ・High-fidelity amplifiers ・Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A IB Base current 7 A PD Total Power Dissipation 117 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6371 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A 4.0 V VBE Base-emitter on voltage IC=16A ; VCE=4V 4.0 V ICEO Collector cut-off current VCE=25V; IB=0 1.5 mA ICEX Collector cut-off current VCE=45V;VBE(off)=1.5V VCE=40V;VBE(off)=1.5V;TC=150℃ 2.0 10.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 mA hFE-1 DC current gain IC=8A ; VCE=4V 15 hFE-2 DC current gain IC=16A ; VCE=4V 4 Transition freuqency IC=1A ; VCE=4V fT CONDITIONS 2 MIN TYP. MAX 40 UNIT V 60 0.8 MHz Inchange Semiconductor Product Specification 2N6371 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3