Product Specification www.jmnic.com 2SA1063 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High transition frequency APPLICATIONS ・Designed for general purpose switching and amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A ICM Collector current-peak -10 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Product Specification www.jmnic.com 2SA1063 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V VBE Base-emitter on voltage IC=-4A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS hFE-1 Classifications R Q P O 40-80 60-120 90-180 140-280 2 MIN TYP. MAX -150 UNIT V 280 50 MHz Product Specification www.jmnic.com 2SA1063 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3