Product Specification www.jmnic.com 2N6226 2N6227 2N6228 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio;stepping motor and other linear applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6226 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6227 Open emitter 120 2N6228 140 2N6226 100 2N6227 Emitter-base voltage UNIT 100 Open base 2N6228 VEBO VALUE 120 V V 140 Open collector 7 V 6 A 150 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.92 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6226 2N6227 2N6228 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6226 VCEO Collector-emitter sustaining voltage 2N6227 TYP. MAX UNIT 100 IC=0.2A ;IB=0 V 120 140 2N6228 VCEsat MIN Collector-emitter saturation voltage IC=4A; IB=0.4A 1.2 V VBE Base-emitter on voltage IC=3A ; VCE=2V 1.8 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA 2N6226 hFE DC current gain 2N6227 IC=3A ; VCE=2V 2N6228 fT Transition frequency IC=0.5A ; VCE=4V JMnic 25 100 20 80 15 60 1 MHz Product Specification www.jmnic.com 2N6226 2N6227 2N6228 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic