JMNIC 2N6227

Product Specification
www.jmnic.com
2N6226 2N6227 2N6228
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・Low collector saturation voltage
・Excellent safe operating area
APPLICATIONS
・For high power audio;stepping motor
and other linear applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6226
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6227
Open emitter
120
2N6228
140
2N6226
100
2N6227
Emitter-base voltage
UNIT
100
Open base
2N6228
VEBO
VALUE
120
V
V
140
Open collector
7
V
6
A
150
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
0.92
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N6226 2N6227 2N6228
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6226
VCEO
Collector-emitter
sustaining voltage
2N6227
TYP.
MAX
UNIT
100
IC=0.2A ;IB=0
V
120
140
2N6228
VCEsat
MIN
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.2
V
VBE
Base-emitter on voltage
IC=3A ; VCE=2V
1.8
V
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
5.0
mA
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.1
mA
2N6226
hFE
DC current gain
2N6227
IC=3A ; VCE=2V
2N6228
fT
Transition frequency
IC=0.5A ; VCE=4V
JMnic
25
100
20
80
15
60
1
MHz
Product Specification
www.jmnic.com
2N6226 2N6227 2N6228
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic