Product Specification www.jmnic.com 2N6229 2N6230 2N6231 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For high power audio; disk head positioners and other linear applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6229 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6230 Open emitter 120 2N6231 140 2N6229 100 2N6230 Emitter-base voltage UNIT 100 Open base 2N6231 VEBO VALUE 120 V V 140 Open collector 7 V 10 A 150 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 0.875 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6229 2N6230 2N6231 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6229 VCEO Collector-emitter sustaining voltage 2N6230 TYP. MAX UNIT 100 IC=0.2A ;IB=0 V 120 140 2N6231 VCEsat MIN Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V VBE Base-emitter on voltage IC=5A ; VCE=2V 2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA 2N6229 hFE DC current gain 2N6230 IC=5A ; VCE=2V 2N6231 fT Transition frequency IC=0.5A ; VCE=4V JMnic 25 100 20 80 15 60 1 MHz Product Specification www.jmnic.com 2N6229 2N6230 2N6231 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic