JMNIC 2SC2773

JMnic
Product Specification
2SC2773
Silicon NPN Power Transistors
・
DESCRIPTION
・With MT-200 package
・High current capability
APPLICATIONS
・For audio power amplifier and general
purpose applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
15
A
IB
Base current
5
A
PC
Collectorl power dissipation
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC2773
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA; IB=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=10 A;IB=1 A
3.0
V
ICBO
Collector cut-off current
VCB=200V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
μA
hFE
DC current gain
IC=5A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
250
pF
VCEsat
‹
CONDITIONS
hFE classifications
O
P
Y
50-100
70-140
90-180
2
MIN
TYP.
50
MAX
UNIT
180
JMnic
Product Specification
2SC2773
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3