JMNIC 2SA1359

JMnic
Product Specification
2SA1359
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SC3422
・Good linearity of hFE
APPLICATIONS
・Audio frequency amplifier
・Low speed switching
・Suitable for output stage of 5W car
radio and car stereo
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-40
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
IB
Base current
-1
A
PD
Total power dissipation
Ta=25℃
1.5
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
JMnic
Product Specification
2SA1359
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-0.8
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-2V
-1.0
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-0.1
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
80
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
25
Cob
Output capacitance
IE=0 ; VCB=-10V f=1MHz
35
pF
fT
Transition frequency
IC=-0.5A ; VCE=-2V
100
MHz
‹
CONDITIONS
hFE-1 Classifications
O
Y
80-160
120-240
2
MIN
TYP.
MAX
-40
UNIT
V
240
JMnic
Product Specification
2SA1359
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SA1359
Silicon PNP Power Transistors
4