Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors · DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IB Base current 1 A PD Total power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=2.0A; IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 80 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 Transition frequency IC=0.5A ; VCE=2V fT CONDITIONS hFE-1 Classifications O Y 80-160 120-240 2 MIN TYP. MAX 40 UNIT V 240 100 MHz Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3