JMNIC 2SB705

JMnic
Product Specification
2SB705/705A/705B
Silicon PNP Power Transistors
・
DESCRIPTION
・With MT-200 package
・Complement to type 2SD745/745A/745B
APPLICATIONS
・Audio frequency power amplifier
・Suitable for output stages of 60~120W audio
amplifiers and voltage regulators
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SB705
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2SB705A
Open emitter
Emitter-base voltage
-150
2SB705B
-160
2SB705
-140
2SB705A
UNIT
-140
Open base
2SB705B
VEBO
VALUE
-150
V
V
-160
Open collector
-5
V
IC
Collector current
-10
A
ICM
Collector current-peak
-15
A
PT
Total power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB705/705A/705B
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB705
V(BR)CEO
Collector-emitter
breakdown voltage
2SB705A
MIN
TYP.
MAX
UNIT
-140
IC=-25mA; IB=0
V
-150
-160
2SB705B
VCEsat
Collector-emitter saturation voltage
IC=-5A;IB=-0.5 A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-5A;IB=-0.5 A
-2.0
V
ICBO
Collector cut-off current
VCB=-140V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
μA
hFE-1
DC current gain
IC=-50mA ; VCE=-5V
20
hFE-2
DC current gain
IC=-2A ; VCE=-5V
40
fT
Transition frequency
IC=-0.2A ; VCE=-5V
17
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
430
pF
‹
hFE-2 classifications
S
R
Q
40-80
60-120
100-200
2
200
JMnic
Product Specification
2SB705/705A/705B
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3