JMnic Product Specification 2SA1789 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-247 package ・Complement to type 2SC4653 ・Low collector saturation voltage APPLICATIONS ・For audio output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V -12 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1789 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-6A;IB=-0.6 A -0.5 V VBEsat Base-emitter saturation voltage IC=-6A;IB=-0.6 A -2.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 μA hFE DC current gain IC=-2A ; VCE=-2V CONDITIONS hFE classifications D E F 60-120 100-200 160-320 2 MIN 60 TYP. MAX 320 UNIT JMnic Product Specification 2SA1789 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3