JMnic Product Specification 2SB548 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD414 APPLICATIONS ・Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -0.8 A PD Total power dissipation Ta=25℃ 1.0 W TC=25℃ 10 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB548 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-0.2A ; VCE=-5V COB Output capacitance IE=0; VCB=-10V;f=1MHz 25 pF fT Transition frequency IC=-0.1A ; VCE=-5V 70 MHz 2 MIN TYP. 40 MAX UNIT 320 JMnic Product Specification 2SB548 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3