JMnic Product Specification 2SA743 2SA743A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1212/1212A APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SA743 VCBO Collector-base voltage -50 Open base 2SA743A VEBO Emitter-base voltage IC Collector current PC Collector power dissipation V -80 2SA743 Collector- emitter voltage UNIT -50 Open emitter 2SA743A VCEO VALUE V -80 Open collector -4 V -1 A Ta=25℃ 0.75 TC=25℃ 8 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ JMnic Product Specification 2SA743 2SA743A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage CONDITIONS 2SA743 MIN TYP. MAX UNIT -50 IC=-10mA ;RBE=∞ 2SA743A V -80 2SA743 -50 IC=-1mA ;IE=0 2SA743A V -80 Emitter-base breakdown voltage IE=-1mA ;IC=0 Collector-emitter saturation voltage IC=-1A ;IB=-0.1A -0.75 -1.5 V VBE Base-emitter voltage IC=-50mA ; VCE=-4V -0.65 -1.0 V ICER Collector cut-off current VCEsat -4 2SA743 VCE=-50V; RBE=1kΩ -20 μA 2SA743A VCE=-80V; RBE=1kΩ -20 μA hFE-1 DC current gain IC=-50mA ; VCE=-4V 60 hFE-2 DC current gain IC=-1A ; VCE=-4V 20 Transition frequency IC=-30mA ; VCE=-4V fT hFE-1 Classifications B C 60-120 100-200 V 2 200 120 MHz JMnic Product Specification 2SA743 2SA743A Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 JMnic Product Specification 2SA743 2SA743A Silicon PNP Power Transistors 4