JMnic Product Specification 2SA807 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・Complement to type 2SC1618 APPLICATIONS ・For power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA807 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -1.0 mA hFE DC current gain IC=-3A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT CONDITIONS MIN TYP. MAX -60 UNIT V 20 10 MHz 1.2 μs 1.8 μs 0.3 μs Switching times tr tstg tf Rise time Storage time VCC=-10V;IC=-3A; RL=3Ω IB1=-0.3A; IB2=50mA Fall time 2 JMnic Product Specification 2SA807 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3