JMnic Product Specification 2SA907/908/909 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC1584/1585/1586 APPLICATIONS ・For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SA907 VCBO VCEO Collector-base voltage Collector-emitter voltage 2SA908 Open emitter Emitter-base voltage -150 2SA909 -200 2SA907 -100 2SA908 UNIT -100 Open base 2SA909 VEBO VALUE -150 V V -200 Open collector -6 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA907/908/909 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA907 V(BR)CEO Collector-emitter breakdown voltage 2SA908 ICBO Collector-emitter saturation voltage Collector cut-off current IC=-50mA ;IB=0 MAX UNIT V -150 -200 IC=-10A; IB=-1A 2SA907 VCB=-100V; IE=0 2SA908 VCB=-150V; IE=0 2SA909 VCB=-200V; IE=0 IEBO Emitter cut-off current VEB=-6V; IC=0 hFE DC current gain IC=-5A ; VCE=-4V Transition frequency IC=-0.5A ; VCE=-12V fT TYP. -100 2SA909 VCEsat MIN 2 -3.0 V -1.0 mA -1.0 mA 30 10 MHz JMnic Product Specification 2SA907/908/909 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3