Inchange Semiconductor Product Specification 2SB555 2SB556 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SD425/426 ・High power dissipation APPLICATIONS ・Power amplifier applications ・Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2SB555 VCBO Collector-base voltage -140 Open base 2SB556 VEBO Emitter-base voltage V -120 2SB555 Collector-emitter voltage UNIT -140 Open emitter 2SB556 VCEO VALUE V -120 Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB555 2SB556 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB555 V(BR)CEO Collector-emitter breakdown voltage MAX IC=-0.1A ;IB=0 Emitter-base breakdown voltage 2SB555 VCEsat TYP. V -120 IE=-10mA ;IC=0 -5 V IC=-7A; IB=-0.7A Collector-emitter saturation voltage 2SB556 UNIT -140 2SB556 V(BR)EBO MIN -3.0 V IC=-6A; IB=-0.6A VBE Base-emitter on voltage IC=-7A ; VCE=-5V -2.5 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-2A ; VCE=-5V COB Output capacitance IE=0 ; VCB=-10V; f=1.0MHz fT Transition frequency IC=-2A ; VCE=-5V 2 40 140 330 pF 6 MHz Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB555 2SB556 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3