JMNIC 2SB1105

JMnic
Product Specification
2SB1105
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・DARLINGTON
・High DC durrent gain
・Complement to type 2SD1605
APPLICATIONS
・Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-120
V
VCEO
Collector-emitter voltage
Open base
-120
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current-DC
-3
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB1105
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA, RBE=∞
V(BR)EBO
Emitter-base breakdown voltage
IE=-50mA, IC=0
VCEsat-1
Collector-emitter saturation voltage
IC=-1.5A ,IB=-3mA
-1.5
V
VCEsat-2
Collector-emitter saturation voltage
IC=-3A ,IB=-30mA
-3.0
V
VBEsat-1
Base-emitter saturation voltage
IC=-1.5A ,IB=-3mA
-2.0
V
VBEsat-2
Base-emitter saturation voltage
IC=-3A ,IB=-30mA
-3.5
V
ICBO
Collector cut-off current
VCB=-120V, IE=0
-100
μA
ICEO
Collector cut-off current
VCE=-100V, RBE=∞
-10
μA
hFE
DC current gain
IC=-1.5A ; VCE=-3V
VD
Diode forward voltage
ID=-3A
3.0
V
2
MIN
TYP.
MAX
UNIT
-120
V
-7
V
1000
JMnic
Product Specification
2SB1105
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3