JMnic Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current-DC -3 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1105 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA, RBE=∞ V(BR)EBO Emitter-base breakdown voltage IE=-50mA, IC=0 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ,IB=-3mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-3A ,IB=-30mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-1.5A ,IB=-3mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-3A ,IB=-30mA -3.5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 μA ICEO Collector cut-off current VCE=-100V, RBE=∞ -10 μA hFE DC current gain IC=-1.5A ; VCE=-3V VD Diode forward voltage ID=-3A 3.0 V 2 MIN TYP. MAX UNIT -120 V -7 V 1000 JMnic Product Specification 2SB1105 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3