JMNIC 2SB546

JMnic
Product Specification
2SB546
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD401
・Collector current IC=-2A
・Collector-base voltage VCBO=-200V
APPLICATIONS
・For use in general purpose power
amplifier,vertical output application
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
-2
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB546
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-150
V
V(BR)CBO
Collector-base breakdown voltage
IC=-0.5mA; IE=0
-200
V
V(BR)EBO
Emitter-base breakdown votage
IE=-0.5mA; IB=0
-5
V
Collector-emitter saturation voltage
IC=-500m A;IB=-50m A
-1.0
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE
DC current gain
IC=-0.4A ; VCE=-10V
Transition frequency
IC=-0.4A ; VCE=-10V
VCEsat
fT
‹
CONDITIONS
hFE classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
40
MAX
UNIT
240
5
MHz
JMnic
Product Specification
2SB546
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB546
Silicon PNP Power Transistors
4