JMNIC 2SB988

JMnic
Product Specification
2SB988
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・Low collector saturation voltage
APPLICATIONS
・For vertical output and general purpose
applicaitons
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current (DC)
-3
A
IB
Base current
-0.5
A
PC
Collector dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
JMnic
Product Specification
2SB988
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-3A; IB=-0.3A
-1.0
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-0.1
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
60
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-5V
‹
CONDITIONS
hFE-1 Classifications
O
Y
60-120
100-200
2
MIN
TYP.
MAX
-60
UNIT
V
200
150
pF
9
MHz
JMnic
Product Specification
2SB988
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3