JMnic Product Specification 2SB988 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・Low collector saturation voltage APPLICATIONS ・For vertical output and general purpose applicaitons PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -3 A IB Base current -0.5 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ JMnic Product Specification 2SB988 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz fT Transition frequency IC=-0.5A ; VCE=-5V CONDITIONS hFE-1 Classifications O Y 60-120 100-200 2 MIN TYP. MAX -60 UNIT V 200 150 pF 9 MHz JMnic Product Specification 2SB988 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3