JMnic Product Specification 2SB903 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Large current capacity. ・Complement to type 2SD1212 APPLICATIONS ・Suitable for relay drivers, high-speed inverters,converters, and other genral large current switching applications. ・High-speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -12 A ICM Collector current-peak -20 A PC Collector power dissipation 1.75 W TC=25℃ 35 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB903 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -60 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V Collector-emitter saturation voltage IC=-5A, IB=-0.25A -0.5 V ICBO Collector cut-offcurrent VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-offcurrent VEB=-4V;IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 hFE-2 DC current gain IC=-6A ; VCE=-2V 30 Transition frequency IC=-1A ; VCE=-5V VCEsat fT 280 120 MHz 0.10 μs 0.30 μs 0.03 μs Switching times ton Turn-on time tstg Storage time tf IC=-5A ;IB1=-IB2=-0.5A; VCC=-10V;RL=2Ω Fall time hFE-1 classifications Q R S 70-140 100-200 140-280 2 JMnic Product Specification 2SB903 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SB903 Silicon PNP Power Transistors 4