JMnic Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3258 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SA1293 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.15A -0.2 -0.4 V VBEsat Base-emitter saturation voltage IC=-3A; IB=-0.15A -0.9 -1.2 V ICBO Collector cut-off current VCB=-100V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -1 μA hFE-1 DC current gain IC=-1A ; VCE=-1V 70 hFE-2 DC current gain IC=-3A ; VCE=-1V 30 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 200 pF fT Transition frequency IC=-1A ; VCE=-4V 60 MHz 0.2 μs 1.0 μs 0.1 μs -80 UNIT V 240 Switching times ton Turn-on time ts Storage time tf Fall time IB1=- IB2=-0.15A RL=10Ω;VCC≈30V hFE-1 Classifications O Y 70-140 120-240 2 JMnic Product Specification 2SA1293 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 JMnic Product Specification 2SA1293 Silicon PNP Power Transistors 4