Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For high-speed switching 0.8max 1 (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 2.0 A Collector current IC 1.0 A 10 W Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Unit: mm 0.75 2.3 6.0 PC Junction temperature 3 6.5±0.2 5.35 4.35 2.3 Collector power dissipation (TC=25°C) 2 1:Base 2:Collector 3:Emitter U Type Package 1.8 Symbol 0.6 0.5±0.1 1 Parameter 1.0±0.2 2.5±0.1 2.3±0.1 4.6±0.1 Parameter ■ Electrical Characteristics 0.5±0.1 0.75±0.1 5.5±0.2 13.3±0.3 ■ Absolute Maximum Ratings 1.0±0.1 0.1±0.05 0.93±0.1 2 3 2.3±0.1 ● High collector to base voltage VCBO High collector to emitter VCEO 1.8±0.1 7.3±0.1 0.5±0.1 ■ Features ● 2.3±0.1 (Ta=25˚C) Symbol Conditions min VCB = 400V, IE = 0 typ 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) max Unit 100 µA 10 µA Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 500 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 500 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 VCE = 5V, IC = 50mA 100 hFE2 VCE = 5V, IC = 330mA 100 Collector to emitter saturation voltage VCE(sat) IC = 330mA, IB = 33mA 1.0 V Base to emitter saturation voltage VBE(sat) IC = 330mA, IB = 33mA 1.5 V Forward current transfer ratio 1 Power Transistors 2SC5223 PC — Ta IC — VCE VCE(sat) — IC 600 Ta=25˚C 10 500 Collector current IC (A) 8 6 4 2 IB=6mA 5mA 4mA 3mA 400 300 2mA 1mA 200 100 0 0 0 40 80 120 160 200 0 Ambient temperature Ta (˚C) 1 VBE(sat) — IC 4 5 6 10 3 TC=–25˚C 100˚C 25˚C 0.1 0.03 0.01 0.001 0.003 0.01 0.03 0.1 TC=100˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.001 0.003 0.3 Collector current IC (A) 1 0.01 0.03 0.1 500 400 TC=100˚C 300 25˚C 200 –25˚C 100 0 0.001 0.003 0.3 1 Cob — VCB 120 VCE=5V 30 0.3 1 hFE — IC IC/IB=10 1 IC/IB=10 3 Collector current IC (A) 600 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 3 10 Collector to emitter voltage VCE (V) 100 2 2 Collector output capacitance Cob (pF) Collector power dissipation PC (W) Without heat sink Collector to emitter saturation voltage VCE(sat) (V) 12 IE=0 f=1MHz Ta=25˚C 100 80 60 40 20 0 0.01 0.03 0.1 0.3 Collector current IC (A) 1 1 3 10 30 100 300 1000 Collector to base voltage VCB (V)