Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION ・With TO-220Fa package ・Satisfactory linearity of foward current transfer ratio hFE ・ Wide area of safe operation (ASO) ・High-speed switching ・High collector to base voltage VCBO APPLICATIONS ・For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO PARAMETER CONDITIONS Collector-base voltage Open emitter Collector-emitter voltage Open base VCEO VCES Open collector VALUE UNIT 900 V 900 V 800 V 7 V VEBO Emitter-base voltage IC Collector current (DC) 1 A ICM Collector current-Peak 2 A IB Base current 0.3 A TC=25℃ 30 W PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SC4004 Silicon NPN Power Transistors CHARACTERISTICS ℃ Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter breakdown voltage IC=1mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.2A IB=0.04A 1.5 V VBEsat Base-emitter saturation voltage IC=0.2A IB=0.04A 1.0 V ICBO Collector cut-off current VCB=900V IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE-1 DC current gain IC=0.05A ; VCE=5V 6 hFE-2 DC current gain IC=0.5A ; VCE=5V 3 Transition frequency IC=0.05A; VCE=10V;f=1MHz fT 800 UNIT V 4 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=0.2A ;IB1=0.04A IB2=-0.04A; VCC=250V JMnic 1.0 μs 3.0 μs 1.0 μs Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic