JMnic Product Specification 2SC4026 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Wide area of safe operation (SOA) APPLICATIONS ・For high breakdown voltage high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 1.5 A PC Collector power dissipation TC=25℃ 35 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC4026 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=2A ; VCE=5V 8 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V 5 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=0.4A;IB2=-0.8A VCC=150V 2 0.7 μs 2.0 μs 0.3 μs JMnic Product Specification 2SC4026 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SC4026 Silicon NPN Power Transistors 4