JMnic Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT V VCBO Collector-base voltage Open emitter -130 VCEO Collector-emitter voltage Open base -80 VEBO Emitter-base voltage Open collector -7 V IC Collector current (DC) -7 A ICM Collector current-Peak -15 A PC Collector power dissipation TC=25℃ 40 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB946 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.25A -0.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.25A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 60 Transition frequency IC=-0.5A ; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.5 μs 1.5 μs 0.1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=-3A ;IB1=-0.3A IB2=0.3A hFE-2 Classifications R Q P 60-120 90-180 130-260 2 JMnic Product Specification 2SB946 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 JMnic Product Specification 2SB946 Silicon PNP Power Transistors 4