Product Specification www.jmnic.com 2SC4148 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-Peak 14 A IB Base current 1.5 A IBM Base current-Peak 2 A PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 5.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case JMnic Product Specification www.jmnic.com 2SC4148 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX 40 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 V VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.2A 0.3 V VBEsat Emitter-base saturation voltage IC=3.5A; IB=0.2A 1.2 V 0.1 mA Collector cut-off current At rated volatge 0.1 mA 0.1 mA ICBO ICEO IEBO Emitter cut-off current At rated volatge hFE DC current gain IC=3.5A ; VCE=2V fT Transition frequency IC=0.7A ; VCE=10V ton Turn-on time ts Storage time tf Fall time IC=3.5A;IB1=0.35A IB2=0.35A ,RL=8Ω VBB2=4V JMnic 70 50 MHz 0.3 μs 1.5 μs 0.5 μs Product Specification www.jmnic.com 2SC4148 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) JMnic