Product Specification www.jmnic.com 2N6216 2N6217 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high power dissipation APPLICATIONS ・For use in switching and linear power applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6216 VCBO Collector-base voltage 150 Open base 2N6217 VEBO V 180 2N6216 Collector-emitter voltage Emitter-base voltage UNIT 200 Open emitter 2N6217 VCEO VALUE V 140 Open collector 7 V 10 A 71 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.46 ℃/W TC=100℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N6216 2N6217 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6216 VCEO(SUS) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 150 IC=0.1A ;IB=0 V 140 2N6217 VCEsat-1 Collector-emitter saturation voltage IC=4A; IB=0.4A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.75A 1.6 V VBEsat Collector-emitter saturation voltage IC=6A; IB=0.75A 2.0 V 5.0 mA 2N6216 ICEO VCE=80V; IB=0 Collector cut-off current 2N6217 VCE=70V; IB=0 ICBO Collector cut-off current VCB=RatedVCBO; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V Transition frequency IC=1A ; VCE=10V fT JMnic 20 80 20 MHz Product Specification www.jmnic.com 2N6216 2N6217 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic