JMNIC 2N6217

Product Specification
www.jmnic.com
2N6216 2N6217
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High current ,high power dissipation
APPLICATIONS
・For use in switching and linear
power applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6216
VCBO
Collector-base voltage
150
Open base
2N6217
VEBO
V
180
2N6216
Collector-emitter voltage
Emitter-base voltage
UNIT
200
Open emitter
2N6217
VCEO
VALUE
V
140
Open collector
7
V
10
A
71
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.46
℃/W
TC=100℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N6216 2N6217
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6216
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
150
IC=0.1A ;IB=0
V
140
2N6217
VCEsat-1
Collector-emitter saturation voltage
IC=4A; IB=0.4A
1.2
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.75A
1.6
V
VBEsat
Collector-emitter saturation voltage
IC=6A; IB=0.75A
2.0
V
5.0
mA
2N6216
ICEO
VCE=80V; IB=0
Collector cut-off current
2N6217
VCE=70V; IB=0
ICBO
Collector cut-off current
VCB=RatedVCBO; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE
DC current gain
IC=5A ; VCE=5V
Transition frequency
IC=1A ; VCE=10V
fT
JMnic
20
80
20
MHz
Product Specification
www.jmnic.com
2N6216 2N6217
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic