Inchange Semiconductor Product Specification 2SD1795 Silicon NPN Power Transistors DESCRIPTION ·With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 12 V IC Collector current 10 A ICM Collector current-Peak 15 A IB Base current 0.5 A IBM Base current-Peak 1.0 A PT Total power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SD1795 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=10mA; IB=0 VCE(sat) Collector-emitter saturation voltage IC=7A; IB=70mA 1.5 V VBE(sat) Base-emitter saturation voltage IC=7A; IB=70mA 2.0 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA ICEO Collector cut-off current VCE=400V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=12V; IC=0 100 mA hFE DC current gain IC=7A ; VCE=2V Transition frequency IC=1A ; VCE=10V fT CONDITIONS MIN TYP. MAX 400 UNIT V 150 10 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=7A;IB1=IB2=70mA, RL=10Ω;VBB2=4V 2 2.0 μs 15 μs 15 μs Inchange Semiconductor Product Specification 2SD1795 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3