Product Specification www.jmnic.com 2N5838 2N5839 2N5840 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage APPLICATIONS ・For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N5838 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5839 Open emitter 300 2N5840 375 2N5838 250 2N5839 Emitter-base voltage UNIT 275 Open base 2N5840 VEBO VALUE 275 V V 350 Open collector 6 V 3 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.25 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5838 2N5839 2N5840 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5838 VCEO Collector-emitter sustaining voltage 2N5839 MIN TYP. MAX UNIT 250 IC=0.1A ;IB=0 2N5840 V 275 350 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 1.0 mA ICEV Collector cut-off current VCE= Rated VCEO; VBE(off)=1.5V 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE fT 2N5838 IC=3A ; VCE=3V 8 40 2N5839/5840 IC=2A ; VCE=3V 10 50 IC=1A ; VCE=10V;f=1.0MHz 5 DC current gain Transition frequency JMnic MHz Product Specification www.jmnic.com 2N5838 2N5839 2N5840 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic