JMNIC 2SC4460

Product Specification
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2SC4460
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PML package
・High breakdown voltage, high reliability.
・Fast switching speed.
・Wide ASO.
APPLICATIONS
・Audio and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Maximum absolute ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
ICM
Collector current-peak
25
A
IB
Base current
4
A
PC
Collectorl power dissipation
55
W
3
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
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Product Specification
www.jmnic.com
2SC4460
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
800
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=∞
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEX(sus)
Collector-emitter sustain voltage
IC=5A;IB1=2A;
IB2=-2A;L=500μH
500
V
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=1.2 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=6A;IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=500V IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1.2A ; VCE=5V
15
hFE-2
DC current gain
IC=6A ; VCE=5V
8
fT
Transition frequency
IC=1.6A ; VCE=10V
20
MHz
COB
Output capacitance
VCB=10V;f=1MHz
160
pF
50
Switching times
ton
Turn-on time
tstg
IC=5IB1=-2.5IB2=7A;
RL=28.6Ω
VCC=200V
Storage time
tf
Fall time
hFE-1 classifications
L
M
N
15-30
20-40
30-50
JMnic
0.5
μs
3.0
μs
0.3
μs
Product Specification
www.jmnic.com
2SC4460
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
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