JMNIC 2SC4161

Product Specification
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2SC4161
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220F package
・High breakdown voltage.
・High reliability.
・Fast switching speed
APPLICATIONS
・Switching Regulator Applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
500
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3
A
PC
Collector dissipation
TC=25℃
30
W
2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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Product Specification
www.jmnic.com
2SC4161
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
400
V
VCBO
Collector-base breakdown voltage
IC=1mA ; IE=0
500
V
VEBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
0.8
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=400V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
15
hFE-2
DC current gain
IC=4A ; VCE=5V
10
hFE-3
DC current gain
IC=10mA ; VCE=5V
10
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
80
pF
fT
Transition frequency
IC=0.8A ; VCE=10V
20
MHz
50
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A; IB1=1A
IB2=-2A
VCC=200V ,RL=40Ω
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
JMnic
0.5
μs
2.5
μs
0.3
μs
Product Specification
www.jmnic.com
2SC4161
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
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