JMnic Product Specification 2SC3151 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage (VCBO≥900V) ・Fast switching speed ・Wide ASO（Safe Operating Area） APPLICATIONS ・800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 1.5 A 5 A 0.8 A 60 W IC Collector current ICM Collector current-peak IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC3151 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=0.75A ;IB=0.15A 2.0 V VBEsat Base-emitter saturation voltage IC=0.75A ;IB=0.15A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 10 hFE -2 DC current gain IC=0.5A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 30 pF fT Transition frequency IC=0.1A ; VCE=10V 15 MHz 40 Switching times ton Turn-on time ts Storage time tf Fall time IC=1A;IB1=0.2A;IB2=-0.4A RL=400Ω,VCC=400V hFE-1 classifications K L M 10-20 15-30 20-40 2 1.0 μs 3.0 μs 0.7 μs JMnic Product Specification 2SC3151 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 JMnic Product Specification 2SC3151 Silicon NPN Power Transistors 4