Product Specification www.jmnic.com 2SC4160 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage. ・High reliability. ・Fast switching speed ・Wide ASO (Safe Operating Area) APPLICATIONS ・400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A ICM Collector current-peak 8 A IB Base current 1.5 A PC Collector dissipation TC=25℃ 25 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SC4160 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞ 400 V VCBO Collector-base breakdown voltage IC=1mA ; IE=0 500 V VEBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.4A ; VCE=5V 15 hFE-2 DC current gain IC=2A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 COB Output capacitance IE=0; VCB=10V;f=1MHz 50 pF fT Transition frequency IC=0.4A ; VCE=10V 20 MHz 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; IB1=0.6A IB2=-1.2A VCC=200V ,RL=66.6Ω hFE-1 Classifications L M N 15-30 20-40 30-50 JMnic 0.5 μs 2.5 μs 0.3 μs Product Specification www.jmnic.com 2SC4160 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic