JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -1 A PC Collector power dissipation 130 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SB1647 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-10mA -2.5 V VBEsat Base-emitter saturation voltage IC=-10A ;IB=-10mA -3.0 V ICBO Collector cut-off current VCB=-150V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-10A ; VCE=-4V Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 320 pF fT Transition frequency IC=-2A ; VCE=-12V 45 MHz 0.7 μs 1.6 μs 1.1 μs -150 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=-10A;RL=4Ω IB1=- IB2=-10mA VCC=-40V hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 2 JMnic Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB1647