JMNIC 2SC5048

Product Specification
www.jmnic.com
2SC5048
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High speed
・High voltage
・Low saturation voltage
・Collector metal (fin) is fully covered
with mold resin
APPLICATIONS
・Horizontal deflection output for high
resolution display,colorTV
・High speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
ICM
Collector current-Peak
24
A
IB
Base current
6
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC5048
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=8A IB=2A
VBEsat
Base-emitter saturation voltage
IC=8A IB=2A
ICBO
Collector cut-off current
IEBO
MIN
TYP.
MAX
600
UNIT
V
3
V
1.4
V
VCB=1500V IE=0
1
mA
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=8A ; VCE=5V
4
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
160
pF
Transition frequency
IE=0.1A ; VCE=10V
1.7
MHz
fT
1.0
Switching times (inductive load)
ts
Storage time
tf
Fall time
ICP=6A;IB1(end) =1.15A
fH=64kHz
JMnic
2.5
4
μs
0.15
0.3
μs
Product Specification
www.jmnic.com
2SC5048
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
JMnic