JMNIC 2SC5129

Product Specification
www.jmnic.com
2SC5129
Silicon Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High speed
・High voltage
・Low saturation voltage
APPLICATIONS
・Horizontal deflection output for high
resolution display,colorTV
・High speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-Peak
20
A
IB
Base current
5
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SC5129
Silicon ower Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=6A IB=1.5A
3.0
V
VBEsat
Base-emitter saturation voltage
IC=6A IB=1.5A
1.4
V
ICBO
Collector cut-off current
VCB=1500V IE=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
10
30
hFE-2
DC current gain
IC=6A ; VCE=5V
4
8
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
135
pF
Transition frequency
IC=0.1A ; VCE=10V
1.7
MHz
fT
CONDITIONS
MIN
TYP.
MAX
600
UNIT
V
Switching times (inductive load)
ts
Storage time
tf
Fall time
ICP=5A;IB1(end) =2A
fH=64kHz
JMnic
4.0
μs
0.3
μs
Product Specification
www.jmnic.com
2SC5129
Silicon Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
JMnic