JMNIC 2SD401

Product Specification
www.jmnic.com
2SD401
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SB546
・Collector current IC=2A
・Collector-base voltage VCBO=200V
APPLICATIONS
・For use in general purpose power
amplifier,vertical output application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
2
A
25
W
IC
Collector current
PC
Collectorl power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
www.jmnic.com
2SD401
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
150
V
VCBO
Collector-base breakdown voltage
IC=0.5mA; IE=0
200
V
VEBO
Emitter-base breakdown votage
IE=0.5mA; IB=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=500m A;IB=50m A
1.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
50
μA
hFE
DC current gain
IC=0.4A ; VCE=10V
Transition frequency
IC=0.4A ; VCE=10V
fT
CONDITIONS
hFE classifications
R
O
Y
G
40-80
70-140
120-240
200-400
JMnic
MIN
TYP.
40
MAX
UNIT
400
5
MHz
Product Specification
www.jmnic.com
2SD401
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
JMnic
Product Specification
www.jmnic.com
2SD401
Silicon NPN Power Transistors
JMnic