JMNIC 2SB860

JMnic
Product Specification
2SB860
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220C package
・Complement to type 2SD1137
APPLICATIONS
・Low frequency power amplifier TV
vertical deflection output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-4
V
IC
Collector current
-4
A
ICP
Collector current-Peak
-5
A
PC
Collector power dissipation
Ta=25℃
1.8
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
JMnic
Product Specification
2SB860
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
V(BR)EBO
Emitter-base breakdown votage
IE=-1mA; IC=0
Collector-emitter saturation voltage
IC=-1 A;IB=-0.1 A
-1.0
V
ICEO
Collector cut-off current
VCE=-80V; RBE=∞
-100
Α
IEBO
Collector cut-off current
VEB=-3.5V; IC=0
-50
Α
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
50
250
hFE-2
DC current gain
IC=-50mA ; VCE=-4V
25
350
VCEsat
CONDITIONS
2
MIN
TYP.
MAX
UNIT
-100
V
-4
V
JMnic
Product Specification
2SB860
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
2SB860
Silicon PNP Power Transistors
4