Product Specification www.jmnic.com 2SD799 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Igniter applications ・High voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IB Base current 1 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD799 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A 2.0 V VBEsat Emitter-base saturation voltage IC=4A; IB=0.04A 2.5 V ICBO Collector cut-off current VCB=600V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE-1 DC current gain IC=2A ; VCE=2V 600 hFE-2 DC current gain IC=4A ; VCE=2V 100 VECF Diode forward voltage IE=4A; IB=0 3.0 V COB Collector output capacitance f=1MHz;VCB=50V JMnic MIN TYP. MAX 400 UNIT V 35 pF Product Specification www.jmnic.com 2SD799 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic