Product Specification www.jmnic.com Silicon Power Transistors BU2722AF ・ DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1700 V VCEO Collector-emitter voltage Open base 825 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current (DC) 10 A ICP Collector current (Pulse) 25 A IB Base current (DC) 10 A IBM Base current (Pulse) 14 A Ptot Total power dissipation 45 W 150 ℃ -65~150 ℃ Tj Tstg TC=25℃ Max.operating junction temperature Storage temperature JMnic Product Specification www.jmnic.com Silicon Power Transistors BU2722AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN TYP. MAX UNIT Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=4.5A IB=1.0A 1.0 V VBEsat Emitter-base saturation voltage IC=4.5A IB=1.0A 1.0 V ICBO Collector cut-off current VCB=BVCBO IE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 DC current gain IC=4.5A ; VCE=1V JMnic 22 4.5 10 Product Specification www.jmnic.com Silicon Power Transistors BU2722AF PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) JMnic