KEC KF5N50PS

SEMICONDUCTOR
KF5N50PR/FR/PS/FS
TECHNICAL DATA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF5N50PR, KF5N50PS
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
O
C
F
E
G
B
Q
FEATURES
I
・VDSS= 500V, ID= 5.0A
K
P
・Drain-Source ON Resistance : RDS(ON)=1.4Ω @VGS = 10V
M
L
・Qg(typ) = 12nC
J
・trr(typ) = 150ns
D
N
MAXIMUM RATING (Tc=25℃)
H
N
RATING
KF5N50PR
KF5N50PS
KF5N50FR
KF5N50FS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Power
Dissipation
Tc=25℃
13*
EAS
270
mJ
EAR
8.6
mJ
dv/dt
20
83
KF5N50FR, KF5N50FS
S
E
0.33
W
W/℃
Tj
150
℃
Tstg
-55~150
℃
L
L
D
N
Thermal Resistance, Junction-to-Case
RthJC
1.5
3.0
℃/W
Thermal Resistance, Junction-toAmbient
RthJA
62.5
62.5
℃/W
R
M
D
Thermal Characteristics
1
N
2
H
3
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
_ 0.3
10.0 +
_ 0.3
15.0 +
_ 0.3
2.70 +
0.76+0.09/-0.05
_ 0.2
Φ3.2 +
_ 0.3
3.0 +
_ 0.3
12.0 +
0.5+0.1/-0.05
_ 0.5
13.6 +
_ 0.2
3.7 +
1.2+0.25/-0.1
1.5+0.25/-0.1
_ 0.1
2.54 +
_ 0.1
6.8 +
_ 0.2
4.5 +
_ 0.2
2.6 +
0.5 Typ
1. GATE
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
TO-220IS
(KF5N50PR, KF5N50FR)
(KF5N50PS, KF5N50FS)
D
D
G
G
S
2008. 10. 10
C
V/ns
41.5
0.66
Derate above 25℃
Storage Temperature Range
13
A
A
PD
Maximum Junction Temperature
2.9*
P
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
IDP
2.9
TO-220AB
B
Pulsed (Note1)
ID
1. GATE
2. DRAIN
3. SOURCE
G
@TC=100℃
5.0*
3
J
Drain Current
5.0
2
Q
@TC=25℃
1
F
SYMBOL
K
CHARACTERISTIC
DIM MILLIMETERS
_ 0.2
9.9 +
A
15.95 MAX
B
1.3+0.1/-0.05
C
_ 0.1
D
0.8 +
_ 0.2
E
3.6 +
_ 0.1
F
2.8 +
3.7
G
H
0.5+0.1/-0.05
1.5
I
_ 0.3
13.08 +
J
K
1.46
_ 0.1
1.4 +
L
_ 0.1
1.27+
M
_ 0.2
2.54 +
N
_ 0.2
4.5 +
O
_ 0.2
2.4 +
P
_ 0.2
9.2 +
Q
S
Revision No : 0
1/7
KF5N50PR/FR/PS/FS
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
500
-
-
V
ID=250㎂, Referenced to 25℃
-
0.55
-
V/℃
Static
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj
ID=250㎂ , VGS=0V
Drain Cut-off Current
IDSS
VDS=500V, VGS=0V,
-
-
10
㎂
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
2.0
-
4.0
V
Gate Leakage Current
IGSS
RDS(ON)
Drain-Source ON Resistance
KF5N50PR/FR
VGS=±30V, VDS=0V
-
-
±100
nA
KF5N50PS/FS
VGS=±25V, VDS=0V
-
-
±10
㎂
-
1.15
1.4
Ω
-
12
-
-
2.4
-
-
5.4
-
-
22.5
-
-
29
-
-
58
-
VGS=10V, ID=2.5A
Dynamic
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay time
td(on)
td(off)
Turn-off Delay time
VGS=10V
(Note4,5)
VDD=250V
tr
Turn-on Rise time
VDS=400V, ID=5A
RL=50Ω
nC
ns
RG=25Ω
(Note4,5)
Turn-off Fall time
tf
-
18
-
Input Capacitance
Ciss
-
430
-
Output Capacitance
Coss
-
71
-
Reverse Transfer Capacitance
Crss
-
7.5
-
-
-
5
-
-
20
VDS=25V, VGS=0V, f=1.0MHz
pF
Source-Drain Diode Ratings
Continuous Source Current
IS
Pulsed Source Current
ISP
Diode Forward Voltage
VSD
IS=5A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=5A, VGS=0V,
-
150
-
ns
Reverse Recovery Charge
Qrr
dIs/dt=100A/㎲
-
0.42
-
μC
VGS<Vth
A
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF5N50
801
PR
2
1
KF5N50
813
FR
1
2
KF5N50
801
PS
2
KF5N50
813
FS
2
1 PRODUCT NAME
2 LOT NO
2008. 10. 10
Revision No : 0
27
KF5N50PR/FR/PS/FS
Fig1. ID - VDS
Fig2. ID - VGS
VDS=30V
Drain Current ID (A)
Drain Current ID (A)
100
VGS=10V
10
VGS=7V
VGS=5V
1
0.1
1
10
TC=100 C
10
0.1
10
1
25 C
0
10
-1
2
100
4
Drain - Source Voltage VDS (V)
On - Resistance RDS(ON) (Ω)
Normalized Breakdown Voltage BVDSS
3.0
1.1
1.0
0.9
0
-50
50
100
2.5
VGS=6V
2.0
1.5
VGS=10V
1.0
0.5
0
0
150
2
4
Junction Temperature Tj ( C )
3.0
2
Normalized On Resistance
Reverse Drain Current IS (A)
1
10
TC=100 C
25 C
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
Source - Drain Voltage VSD (V)
2008. 10. 10
Revision No : 0
8
10
12
Fig6. RDS(ON) - Tj
10
0.2
6
Drain Current ID (A)
Fig5. IS - VSD
10
10
Fig4. RDS(ON) - ID
VGS = 0V
IDS = 250
0.8
-100
8
Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj
1.2
6
1.6
1.8
2.5
VGS =10V
IDS = 2.5A
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
Junction Temperature Tj ( C)
37
KF5N50PR/FR/PS/FS
Fig 7. C - VDS
Fig8. Qg- VGS
12
Capacitance (pF)
Ciss
100
Coss
10
Crss
1
0
5
10
15
20
25
30
35
Gate - Source Voltage VGS (V)
1000
ID=5A
10
8
VDS = 400V
VDS = 250V
6
VDS = 100V
4
2
0
2
0
40
(KF5N50PR, KF5N50PS)
12
14
16
(KF5N50FR, KF5N50FS)
102 Operation in this
area is limited by RDS(ON)
101
100µs
1ms
100
10ms
100ms
DC
10-1
Tc= 25 C
Tj = 150 C
2 Single pulse
Drain Current ID (A)
area is limited by RDS(ON)
Drain Current ID (A)
10
Fig10. Safe Operation Area
Fig9. Safe Operation Area
10
100
8
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
102 Operation in this
6
4
101
100µs
100
1ms
10ms
100ms
10-1
DC
Tc= 25 C
Tj = 150 C
2 Single pulse
102
101
103
10
100
101
102
103
Drain - Source Voltage VDS (V)
Drain - Source Voltage VDS (V)
Fig11. ID - Tj
6
Drain Current ID (A)
5
4
3
2
1
0
0
25
50
75
100
125
150
Junction Temperature Tj ( C)
2008. 10. 10
Revision No : 0
47
KF5N50PR/FR/PS/FS
Fig12. Transient Thermal Response Curve
(KF5N50PR. KF5N50PS)
100
Transient Thermal Resistance
Duty=0.5
0.2
10-1
PDM
0.1
t1
0.05
t2
0.02
lse
gle
1
Pu
- Duty Factor, D= t1/t2
Sin
0.0
- RthJC =
10-2
10-5
10-4
10-3
10-2
10-1
Tj(max) - Tc
PD
100
101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF5N50FR. KF5N50FS)
Transient Thermal Resistance
Duty=0.5
100
0.2
0.1
0.05
10-1
PDM
0.02
t1
0.01
gl
Sin
10-2
10-5
t2
lse
u
eP
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
10-4
10-3
10-2
10-1
100
101
TIME (sec)
2008. 10. 10
Revision No : 0
57
KF5N50PR/FR/PS/FS
Fig14. Gate Charge
VGS
10 V
Fast
Recovery
Diode
ID
0.8 VDSS
ID
1.0 mA
Q
VDS
Qgd
Qgs
Qg
VGS
Fig15. Single Pulsed Avalanche Energy
EAS=
1
LIAS2
2
BVDSS
BVDSS - VDD
BVDSS
L
IAS
50V
25Ω
ID(t)
VDS
VGS
10 V
VDD
VDS(t)
Time
tp
Fig16. Resistive Load Switching
VDS
90%
RL
0.5 VDSS
VGS 10%
25 Ω
VDS
10V
2008. 10. 10
VGS
Revision No : 0
td(on)
ton
tr
td(off)
tf
toff
67
KF5N50PR/FR/PS/FS
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
VDS
IF
ISD
(DUT)
di/dt
IRM
IS
0.5
VDSS
VDS
(DUT)
driver
10V
2008. 10. 10
Body Diode Reverse Current
VGS
Revision No : 0
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
77