SEMICONDUCTOR KU068N03D TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. A C K D L B FEATURES ・VDSS=30V, ID=68A. H ・Low Drain to Source On-state Resistance. J E N G : RDS(ON)=6.8mΩ(Max.) @ VGS=10V F F M : RDS(ON)=13.2mΩ(Max.) @ VGS=4.5V 1 2 DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 1. GATE 2. DRAIN 3. SOURCE 3 MAXIMUM RATING (Ta=25℃ Unless otherwise Noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V DC@TC=25℃ (Note1) ID 68 Pulsed (Note2) IDP 272 (Note3) EAS 89 Drain Current Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25℃ (Note1) @Ta=25℃ (Note2) Storage Temperature Range Marking A mJ 45 PD Maximum Junction Temperature DPAK (1) W 3.8 Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction to Case (Note1) RthJC 2.8 ℃/W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 ℃/W KU068N03 D Type Name Lot No Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″×1″Pad of 2 oz copper. Note 3) L=20μH, IAS=68A, VDD=15V, VGS=10V, Starting Tj=25℃ PIN CONNECTION (TOP VIEW) D 2 2 1 2010. 6. 16 1 3 G S Revision No : 0 3 1/4 KU068N03D ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250μA 30 - - V Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 μA Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=250μA 1.0 - 3.0 V Drain to Source Breakdown Voltage RDS(ON) Drain to Source On Resistance gfs Forward Transconductance VGS=10V, ID=30A (Note4) - 5.7 6.8 VGS=4.5V, ID=30A (Note4) - 11.0 13.2 VDS=5V, ID=30A (Note4) - 55 - - 1265 - - 266 - - 198 - - 2.9 - - 29.9 - - 16.6 - - 4.6 - mΩ S Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge VGS=10V Qg VGS=4.5V Qg VDS=15V, f=1MHz, VGS=0V f=1MHz VDS=15V, VGS=10V, ID=30A (Note4) pF Ω nC Gate to Source Charge Qgs Gate to Drain Charge Qgd - 7.2 - Turn-On Delay Time td(on) - 8.4 - - 13.0 - - 32.2 - - 9.2 - - 0.8 1.2 V tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD=15V, VGS=10V ID=30A, RG=1.6Ω (Note4) tf Turn-Off Fall Time ns Source to Drain Diode Ratings Source to Drain Forward Voltage VSD VGS=0V, IS=30A (Note4) Reverse Recovery Time trr IS=30A, dI/dt=100A/μs - 21.1 - ns Reverse Recovered Charge Qrr IS=30A, dI/dt=100A/μs - 9.3 - nC Note 4) Pulse Test : Pulse width <300㎲ , Duty cycle < 2% 2010. 6. 16 Revision No : 0 2/4 Fig1. ID - VDS Drain Current ID (A) 100 VGS=10V 4.5V 5.0V 4.0V 80 60 3.5V 40 3.0V 20 0 0 0.5 1 1.5 2 2.5 3 Drain to Source On Resistance RDS(ON) (mΩ) KU068N03D Fig2. RDS(on) - ID 20 16 12 VGS=4.5V 8 VGS=10V 4 0 0 1 Drain to Source Voltage VDS (V) Fig4. RDS(ON) - Tj Normalized On Resistance RDS(ON) 100 Drain Current ID (A) VDS=5V 80 60 40 Tj=25 C Tj=150 C Tj=-55 0 0 1 2 3 C 4 5 2.0 1.8 1.6 1.2 VGS=4.5V, ID=30A 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Fig6. C - VSD Fig5. Vth - Tj 103 1.6 VDS = VGS, ID = 250µA 1.4 Capacitance C(pF) Normalized Gate to Source Threshold Voltage VGS=10V, ID=30A 1.4 Gate to Source Voltage VGS (V) 1.2 1.0 0.8 0.6 102 101 Tj=150 C Tj=25 C Tj=-55 C 100 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) 2010. 6. 16 100 Drain Current ID (A) Fig3. ID - VGS 20 10 Revision No : 0 10-1 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage VSD (V) 3/4 Fig8. C - VDS Fig7. RDS(ON) - VGS 104 20 16 12 Tj=150 C 8 4 0 Ciss 103 Coss Crss 102 Tj=25 C 0 2 4 6 8 10 101 12 0 5 10 15 20 25 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS Fig10. Safe Operation Area 10 30 103 VDS = 15V, ID = 30A 8 Drain Current ID (A) Gate to Source Voltage VGS (V) f=1MHz ID=30A Capacitance C (pF) Drain to Source On Resistance RDS(ON) (mΩ) KU068N03D 6 4 2 102 101 RD S( O N) 100us t mi Li 1ms 10ms DC 100 VGS= 10V SINGLE PULSE TC= 25 C 0 0 7 14 21 28 35 10-1 10-2 Gate to Charge Qg (nC) 10-1 100 101 102 Drain to Source Voltage VDS (V) Fig11. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 0.5 0.2 0.1 0.05 0.02 10-1 0.01 Single Pulse PDM t1 t2 RthJC= 2.4 C/W 10-2 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration (sec) 2010. 6. 16 Revision No : 0 4/4