KEC KMB054N40IA

SEMICONDUCTOR
KMB054N40IA
TECHNICAL DATA
N-Ch Trench MOSFET
General Description
A
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
H
J
B
D
C
K
M
P
FEATURES
N
E
VDSS=40V, ID=54A.
Low Drain-Source ON Resistance.
G
: RDS(ON)=8.5m (Max.) @ VGS=10V
F
: RDS(ON)=11m (Max.) @ VGS=4.5V
L
F
Super High Dense Cell Design.
High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25
1
SYMBOL
N-Ch
UNIT
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
20
[email protected]=25
(Note1)
ID
54
Pulsed
(Note2)
IDP
100
IS
100
Drain-Source-Diode Forward Current
Drain Power Dissipation
3
MILLIMETERS
A
B
_ 0.2
6.6 +
_ 0.2
6.1 +
C
_ 0.3
5.34 +
D
_ 0.2
0.7 +
E
_ 0.3
9.3 +
F
_ 0.2
2.3 +
G
_ 0.1
0.76 +
H
_ 0.1
2.3 +
J
_ 0.1
0.5 +
K
_ 0.2
1.8 +
L
_ 0.1
0.5 +
M
N
_ 0.1
1.0 +
0.96 MAX
P
_ 0.3
1.02 +
Unless otherwise Noted)
CHARACTERISTIC
Drain Current
2
DIM
@TC=25
(Note1)
@Ta=25
(Note2)
PD
A
A
Type Name
W
3.1
150
Tstg
-55 150
(Note1)
RthJC
2.8
/W
Thermal Resistance, Junction to Ambient (Note2)
RthJA
40
/W
Storage Temperature Range
Thermal Resistance, Junction to Case
Marking
45
Tj
Maximum Junction Temperature
IPAK(1)
V
KMB
054N40
IA
Lot No
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper.
PIN CONNECTION (TOP VIEW)
2
D
2
1
2009. 7. 30
1
3
G
S
Revision No : 0
3
1/5
KMB054N40IA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
BVDSS
VGS=0V, ID=250 A
40
-
-
V
Drain Cut-off Current
IDSS
VGS=0V, VDS=32V
-
-
1
A
Gate Leakage Current
IGSS
VGS=
-
-
100
nA
Gate Threshold Voltage
Vth
VDS=VGS, ID=250 A
1
1.9
3
V
VGS=10V, ID=14A
-
6.5
8.5
VGS=4.5V, ID=11A
-
8.5
11
VGS=10V, ID=14A, Tj=125
-
10.4
14
VDS=10V, ID=20A
-
58
-
-
1280
-
-
250
-
Drain-Source Breakdown Voltage
RDS(ON)*
Drain-Source ON Resistance
gfs*
Forward Transconductance
20V, VDS=0V
m
S
Dynamic
Input Capacitance
Ciss
Ouput Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
125
-
VGS=10V
Qg*
-
25.4
-
VGS=5V
Qg*
-
13.8
-
-
5.7
-
Total Gate Charge
VDS=20V, f=1MHz, VGS=0V
VDS=20V, VGS=10V, ID=14A
nC
Gate-Source Charge
Qgs*
Gate-Drain Charge
Qgd*
-
5.4
-
Turn-On Delay Time
td(on)*
-
19
-
VDD=20V, VGS=10V
-
16
-
ID=1A, RG=6
-
60
-
-
14
-
-
0.8
1.2
tr*
Turn-On Rise Time
td(off)*
Turn-Off Delay Time
tf*
Turn-Off Fall Time
pF
ns
Source-Drain Diode Ratings
VSDF*
Source-Drain Forward Voltage
Note>* Pulse Test : Pulse width <300
2009. 7. 30
VGS=0V, IS=14A
V
, Duty cycle < 2%
Revision No : 0
2/5
KMB054N40IA
Fig2. RDS(ON)-ID
VGS=10V
6.0V
5.0V
4.5V
80
60
4.0V
40
20
3.5V
0
0
0.5
1
1.5
2
2.5
Drain Current ID (A)
60
40
25 C
20
Ta=125 C
-55 C
0
2.5
3
3.5
4
4.5
VGS=10V
0
0
6
12
18
24
30
20
VGS=10V, ID=14A
16
12
8
4
0
-75
-50
-25
0
25
50
75
100 125 150
Gate Source Volatage VGS (V)
Junction Temperature Tj ( C )
Fig5. Vth - Tj
Fig6. IS - VSDF
1000
VGS=VDS
ID=250µA
Reverse Drain Current IS (A)
Gate Threshold Voltage Vth (V)
2
1.5
4
3
2
1
100
Ta=125 C
Ta=25 C
10
1
0.1
-50
-25
0
25
50
75
100 125 150
Junction Temperature Tj ( C)
2009. 7. 30
VGS=4.5V
Fig4. RDS(on) - Tj
80
0
-75
15
Fig3. ID - VGS
VDS=5V
5
Ta=25 C
Drain - Current ID (A)
100
1
30
Drain - Source Voltage VDS (V)
Drain-Source On-Resistance RDS(ON) (mΩ)
Drain Current ID (A)
100
Drain Source On Resistance RDS(ON) (mΩ)
Fig1. ID - VDS
Revision No : 0
0.2
0.4
0.6
0.8
1
1.2
Source - Drain Forward Voltage VSDF (V)
3/5
KMB054N40IA
Fig 8. C - VDS
Fig 7. VGS - Qg
2000
VDS = 20V
ID = 14A
f=1MHz
8
1500
Capacitance (pF)
Gate - Source Voltage VGS (V)
10
6
4
Ciss
1000
500
2
0
Coss
Crss
0
10
5
0
20
15
25
0
30
10
20
30
40
Drain - Source Voltage VDS (V)
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
103
Drain Current ID (A)
RDS(ON) Limited
102
10µs
100us
1ms
10ms
DC
101
100
VGS= 10V
SINGLE PULSE
TC= 25 C
10-1
10-1
100
101
102
Normalized Effective Transient Thermal Resistance
Drain - Source Voltage VDS (V)
Fig10. Transient Thermal Response Curve
10
1
1
D = 0.5
PDM
0.2
t1
0.1
0.05
0.02
-1
10
t2
- Duty = t/T
Tj(max) - Tc
- RthJC =
PD
SINGLE
0.01
-2
10
-5
10
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration tw (sec)
2009. 7. 30
Revision No : 0
4/5
KMB054N40IA
Fig11. Gate Charge Circuit and Wave Form
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
Q
VDS
Qgd
Qgs
Qg
VGS
Fig12. Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
VGS
10%
td(on)
tr
ton
2009. 7. 30
Revision No : 0
td(off)
tf
toff
5/5