SEMICONDUCTOR KU056N03Q TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for DC/DC Converter and Battery pack. H T P D L G FEATURES ・VDSS=30V, ID=17A. A ・Drain to Source On Resistance. RDS(ON)=5.6mΩ(Max.) @ VGS=10V 8 RDS(ON)=9.7mΩ(Max.) @ VGS=4.5V 5 B1 B2 1 4 MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted) CHARACTERISTIC SYMBOL RATING VDSS 30 V Gate to Source Voltage VGSS ±20 V DC@Ta=25℃ (Note 1) ID 17 A Pulsed IDP 68 A PD 2.5 W Tj 150 ℃ Tstg -55~150 ℃ RthJA 50 ℃/W Drain Power Dissipation @Ta=25℃ (Note 1) Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient (Note 1) Note1) Surface Mounted on 1″×1″FR4 Board, t≤10sec. MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 UNIT Drain to Source Voltage Drain Current DIM A B1 B2 D G H L P T FLP-8 KU056N 03Q PIN CONNECTION (TOP VIEW) S 1 8 D S 2 7 D S 3 6 D G 4 5 D 2010. 6. 17 1 8 2 7 3 6 4 5 Revision No : 0 1/4 KU056N03Q ELECTRICAL CHARACTERISTICS (Ta=25℃) UNLESS OTHERWISE NOTED CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250μA 30 - - V Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 μA Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=250μA 1.0 - 3.0 V Drain to Source Breakdown Voltage RDS(ON) Drain to Source On Resistance gfs Forward Transconductance VGS=10V, ID=17A (Note2) - 4.7 5.6 VGS=4.5V, ID=14A (Note2) - 8.1 9.7 VDS=5V, ID=17A (Note2) - 68 - - 2772 - - 550 - - 398 - - 3.5 - - 64.5 - - 32.2 - - 8.0 - mΩ S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge VGS=10V VGS=4.5V VDS=15V, VGS=0V, f=1MHz (Note2) f=1MHz Qg VDS=15V, VGS=10V, ID=17A (Note2) pF Ω nC Gate to Source Charge Qgs Gate to Drain Charge Qgd - 14.3 - Turn-On Delay Time td(on) - 11.0 - - 15.8 - - 58.2 - - 20.0 - - 0.8 1.2 V tr Turn-On Rise Time td(off) Turn-Off Delay Time VDS=15V, VGS=10V ID=17A, RG=1.6Ω (Note2) tf Turn-Off Fall Time ns Source to Drain Diode Ratings Source to Drain Forward Voltage VSD VGS=0V, IS=17A (Note2) Reverse Recovery Time trr IS=17A, dI/dt=100A/μ s - 26.1 - ns Reverse Recovery Charge Qrr IS=17A, dI/dt=100A/μ s - 17.3 - nC Note2) Pulse Test : Pulse Width≤300㎲, Duty Cycle≤2% 2010. 6. 17 Revision No : 0 2/4 KU056N03Q Drain Current ID (A) 70 VGS=10V, 5V, 4.5V, 3.5V, 4.0V 3.0V 56 42 28 14 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain to Source On Resistance RDS(ON) (mΩ) Fig2. RDS(on) - ID Fig1. ID - VDS 10 8 6 VGS=4.5V 4 VGS=10V 2 0 0 14 Drain to Source Voltage VDS (V) Normalized On Resistance RDS(ON) Drain Current ID (A) VDS = 5V 56 42 28 Tj=25 C Tj=150 C Tj=-55 C 0 1 2 3 4 1.8 1.6 1.4 1.2 VGS=10V, ID=17A VGS=4.5V, ID=14A 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Fig6. IS - VSD Fig5. Vth - Tj 1.6 102 VDS = VGS, ID = 250µA Reverse Drain Current IS (A) Normalized Gate to Source Threshold Voltage 70 2.0 Gate to Source Voltage VGS (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) 2010. 6. 17 56 Fig4. RDS(ON) - Tj 70 0 42 Drain Current ID (A) Fig3. ID - VGS 14 28 Revision No : 0 101 Tj=150 C Tj=25 C 100 10-1 0.2 0.4 0.6 Tj=-55 C 0.8 1.0 1.2 Source to Drain Voltage VSD (V) 3/4 Fig8. C - VDS Fig7. RDS(ON) - VGS 20 104 f=1MHz ID=17A Ciss 16 Capacitance C (pF) Drain to Source On Resistance RDS(ON) (mΩ) KU056N03Q 12 8 Tj=150 C Coss Crss 102 4 Tj=25 C 0 2 4 6 8 101 10 0 5 10 15 20 25 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Fig9. Qg - VGS Fig10. Safe Operation Area 10 30 102 VDS = 15V, ID = 17A 100us 8 Drain Current ID (A) Gate to Source Voltage VGS (V) 103 6 4 2 101 L R DS 100 N) (O 10ms 100ms 10-1 DC VGS= 10V SINGLE PULSE TA= 25 C 0 0 1ms IT IM 15 30 45 60 10-2 10-2 75 Gate to Charge Qg (nC) 10-1 100 101 102 Drain to Source Voltage VDS (V) Normalized Effective Transient Thermal Resistance Fig11. Transient Thermal Response Curve 101 100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 PDM 10-2 t1 t2 Single Pulse RthJA=58.0 C/W 10-3 10-4 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tW(sec) 2010. 6. 17 Revision No : 0 4/4