SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. O C F E G B Q FEATURES I ・VDSS= 500V, ID= 5.0A K P ・Drain-Source ON Resistance : RDS(ON)=1.4Ω @VGS = 10V M L ・Qg(typ) = 12nC J D N H N MAXIMUM RATING (Tc=25℃) RATING KF5N50P KF5N50PZ KF5N50F KF5N50FZ UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Tc=25℃ Drain Power Dissipation 13* KF5N50F, KF5N50FZ A mJ EAR 8.6 mJ dv/dt 4.5 C S P 270 Derate above 25℃ Storage Temperature Range 13 A EAS PD Maximum Junction Temperature 2.9* TO-220AB E B Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) IDP 2.9 1. GATE 2. DRAIN 3. SOURCE G Pulsed (Note1) ID 5.0* 3 83 V/ns 41.5 0.66 0.33 W W/℃ Tj 150 ℃ Tstg -55～150 ℃ L L M D D Thermal Characteristics N Thermal Resistance, Junction-to-Case RthJC 1.5 3.0 ℃/W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 ℃/W R J @TC=100℃ Drain Current 5.0 2 1 N 2 H 3 Q @TC=25℃ 1 F SYMBOL K CHARACTERISTIC DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q DIM MILLIMETERS A B C D E F G H J K L M N P Q R S _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + 0.5 Typ 1. GATE 2. DRAIN 3. SOURCE * : Drain current limited by maximum junction temperature. PIN CONNECTION TO-220IS (KF5N50P, KF5N50F) (KF5N50PZ, KF5N50FZ) D D G G S 2008. 11. 19 S Revision No : 0 1/7 KF5N50P/F/PZ/FZ ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 500 - - V ID=250㎂, Referenced to 25℃ - 0.55 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂ , VGS=0V Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.0 - 4.0 V Gate Leakage Current IGSS RDS(ON) Drain-Source ON Resistance KF5N50P/F VGS=±30V, VDS=0V - - ±100 nA KF5N50PZ/FZ VGS=±25V, VDS=0V - - ±10 ㎂ - 1.15 1.4 Ω - 12 - - 2.4 - - 5.4 - - 22.5 - - 29 - - 58 - VGS=10V, ID=2.5A Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) td(off) Turn-off Delay time VGS=10V (Note4,5) VDD=250V tr Turn-on Rise time VDS=400V, ID=5A RL=50Ω nC ns RG=25Ω (Note4,5) Turn-off Fall time tf - 18 - Input Capacitance Ciss - 430 - Output Capacitance Coss - 71 - Reverse Transfer Capacitance Crss - 7.5 - - - 5 - - 20 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, - 150 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.42 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. Marking 1 1 KF5N50 801 P 2 1 KF5N50 813 F 1 2 KF5N50 801 PZ 2 KF5N50 813 FZ 2 1 PRODUCT NAME 2 LOT NO 2008. 11. 19 Revision No : 0 2/7 KF5N50P/F/PZ/FZ Fig1. ID - VDS Fig2. ID - VGS VDS=30V Drain Current ID (A) Drain Current ID (A) 100 VGS=10V 10 VGS=7V VGS=5V 1 10 1 TC=100 C 10 25 C 0 -1 0.1 10 0.1 10 1 2 100 4 Drain - Source Voltage VDS (V) On - Resistance RDS(ON) (Ω) Normalized Breakdown Voltage BVDSS 3.0 1.1 1.0 0.9 0 -50 50 100 2.5 VGS=6V 2.0 1.5 VGS=10V 1.0 0.5 0 0 150 2 4 Junction Temperature Tj ( C ) 3.0 2 Normalized On Resistance Reverse Drain Current IS (A) 1 10 TC=100 C 25 C 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 2008. 11. 19 Revision No : 0 8 10 12 Fig6. RDS(ON) - Tj 10 0.2 6 Drain Current ID (A) Fig5. IS - VSD 10 10 Fig4. RDS(ON) - ID VGS = 0V IDS = 250 0.8 -100 8 Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj 1.2 6 1.6 1.8 2.5 VGS =10V IDS = 2.5A 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C) 3/7 KF5N50P/F/PZ/FZ Fig 7. C - VDS Fig8. Qg- VGS 12 Capacitance (pF) Ciss 100 Coss 10 Crss 1 0 5 10 15 20 25 30 35 Gate - Source Voltage VGS (V) 1000 ID=5A 10 8 VDS = 400V VDS = 250V 6 VDS = 100V 4 2 0 2 0 40 (KF5N50P, KF5N50PZ) 12 14 16 (KF5N50F, KF5N50FZ) 102 Operation in this area is limited by RDS(ON) 101 100µs 1ms 100 10ms 100ms DC 10-1 Tc= 25 C Tj = 150 C 2 Single pulse Drain Current ID (A) area is limited by RDS(ON) Drain Current ID (A) 10 Fig10. Safe Operation Area Fig9. Safe Operation Area 10 100 8 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) 102 Operation in this 6 4 101 100µs 100 1ms 10ms 100ms 10-1 DC Tc= 25 C Tj = 150 C 2 Single pulse 102 101 103 10 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 6 Drain Current ID (A) 5 4 3 2 1 0 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2008. 11. 19 Revision No : 0 4/7 KF5N50P/F/PZ/FZ Fig12. Transient Thermal Response Curve (KF5N50P. KF5N50PZ) 100 Transient Thermal Resistance Duty=0.5 0.2 10-1 PDM 0.1 t1 0.05 t2 0.02 gle 1 e uls - Duty Factor, D= t1/t2 P Sin 0.0 - RthJC = 10-2 10-5 10-4 10-3 10-2 10-1 Tj(max) - Tc PD 100 101 TIME (sec) Fig13. Transient Thermal Response Curve (KF5N50F. KF5N50FZ) Transient Thermal Resistance Duty=0.5 100 0.2 0.1 0.05 10-1 PDM 0.02 t1 0.01 P gle t2 e uls - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD Sin 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2008. 11. 19 Revision No : 0 5/7 KF5N50P/F/PZ/FZ Fig14. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig15. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2008. 11. 19 VGS Revision No : 0 td(on) ton tr td(off) tf toff 6/7 KF5N50P/F/PZ/FZ Fig17. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.5 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2008. 11. 19 VGS Revision No : 0 Body Diode Forword Voltage drop 7/7