KEC KF5N53F

SEMICONDUCTOR
KF5N53F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
・VDSS= 525V, ID= 5.0A
・Drain-Source ON Resistance : RDS(ON)=1.5Ω @VGS = 10V
・Qg(typ) = 12nC
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
525
V
Gate-Source Voltage
VGSS
±30
V
@TC=25℃
Drain Current
@TC=100℃
ID
5.0*
2.9*
A
IDP
13*
EAS
200
mJ
EAR
4.3
mJ
dv/dt
4.5
V/ns
37.9
W
0.30
W/℃
Tj
150
℃
Tstg
-55~150
℃
Thermal Resistance, Junction-to-Case
RthJC
3.3
℃/W
Thermal Resistance, Junction-toAmbient
RthJA
62.5
℃/W
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
PD
Derate above 25℃
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
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KF5N53F
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
525
-
-
V
ID=250㎂, Referenced to 25℃
-
0.57
-
V/℃
Static
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj
ID=250㎂ , VGS=0V
Drain Cut-off Current
IDSS
VDS=525V, VGS=0V,
-
-
10
㎂
Gate Threshold Voltage
Vth
VDS=VGS, ID=250㎂
2.5
-
4.5
V
Gate Leakage Current
IGSS
VGS=±30V, VDS=0V
-
-
±10
㎂
VGS=10V, ID=2.5A
-
1.35
1.5
Ω
-
12
-
-
2.4
-
-
5.4
-
-
30
-
-
30
-
-
60
-
RDS(ON)
Drain-Source ON Resistance
Dynamic
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-on Delay time
td(on)
tr
Turn-on Rise time
td(off)
Turn-off Delay time
VDS=400V, ID=5A
VGS=10V
(Note4,5)
VDD=250V
RL=50Ω
RG=25Ω
nC
ns
(Note4,5)
Turn-off Fall time
tf
-
25
-
Input Capacitance
Ciss
-
500
-
Output Capacitance
Coss
-
65
-
Reverse Transfer Capacitance
Crss
-
5.8
-
-
-
5
-
-
20
VDS=25V, VGS=0V, f=1.0MHz
pF
Source-Drain Diode Ratings
Continuous Source Current
IS
Pulsed Source Current
ISP
Diode Forward Voltage
VSD
IS=5A, VGS=0V
-
-
1.4
V
Reverse Recovery Time
trr
IS=5A, VGS=0V,
-
300
-
ns
Reverse Recovery Charge
Qrr
dIs/dt=100A/㎲
-
2.0
-
μC
VGS<Vth
A
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=14.5mH, IAS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
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