Transistors IC SMD Type PNP General Purpose Transistor BC856W,BC857W,BC858W Features Low current (max. 100 mA). Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856W BC857W BC858W Unit Collector-base voltage VCBO -80 -50 -30 V Collector-emitter voltage VCEO -65 -45 -30 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Total power dissipation mW Ptot 200 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 K/W www.kexin.com.cn 1 Transistors IC SMD Type BC856W,BC857W,BC858W Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Testconditons ICBO VCB = -30 V; IE = 0 ICBO VCB = -30 V; IE = 0;Tj = 150 IEBO VEB = -5 V; IC = 0 BC856W Min BC857W,BC858W hFE IC = -2 mA; VCE = -5 V BC856BW,BC857BW BC857CW VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE Unit nA -4 ìA -100 nA 475 125 800 250 220 475 800 IC = -10 mA; IB = -0.5 mA -75 -300 mV IC = -100 mA; IB = -5 mA;* -250 -600 mV IC = -10 mA; IB = -0.5 mA -700 mV IC = -100 mA; IB = -5 mA;* -850 mV IC = -2 mA; VCE = -5 V Collector capacitance CC VCB = -10 V; IE = Ie = 0;f = 1 MHz Emitter capacitance Ce VEB = -0.5 V; IC = Ic = 0;f = 1 MHz Transition frequency fT VCE = -5 V; IC = -10 mA;f = 100 MHz Noise figure NF IC = -200 ìA; VCE = -5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz 0.02. hFE Classification TYPE BC856W BC856AW BC856BW Marking 3D 3A 3B TYPE BC857W BC857AW BC857BW BC857CW Marking 3H 3E 3F 3G TYPE BC858W Marking 3M www.kexin.com.cn -15 125 -600 IC = -10 mA; VCE = -5 V 2 -1 420 Collector-emitter saturation voltage 300ìs, ä Max 125 DC current gain BC856AW,BC857AW * Pulse test: tp Typ -650 -750 mV -820 mV 3 pF 12 100 pF MHz 10 dB