KEXIN 2SA1797

Transistors
SMD Type
Power Transistor
2SA1797
SOT-89
Unit: mm
+0.1
4.50-0.1
+0.1
1.50-0.1
+0.1
2.50-0.1
Features
+0.1
4.00-0.1
+0.1
1.80-0.1
Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA.
+0.1
2.60-0.1
Complements the 2SA1797 and 2SC4672.
+0.1
0.44-0.1
+0.1
0.80-0.1
+0.1
0.53-0.1
+0.1
0.48-0.1
Excellent DC current gain characteristics.
1. Base
+0.1
0.40-0.1
+0.1
3.00-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-emitter Voltage
Parameter
VCEO
-50
V
Collector-base Voltage
VCBO
-50
V
Emitter-base Voltage
VEBO
-6
V
Collector current
IC
-3
A
Collector power dissipation
PC
0.5
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-emitter breakdown voltage
BVCEO
IC = -1mA
-50
V
Collector-base breakdown voltae
BVCBO
IC = -50 A
-50
V
Emitter-base breakdown voltage
-6
V
BVEBO
IE = -50 A
Collector cutoff current
ICBO
VCB = -50V
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -5V
-0.1
ìA
-0.15 -0.35
V
VCE(sat) IC = -1A , IB = -50mA
Collector-Emitter Saturation Voltage
DC current transfer ratio
hFE
Transition frequency
fT
Output Capacitance
Cob
VCE = -2V , IC = -0.5A
82
270
VCE = -2V , IE = 0.5A , f = 100MHz
200
MHz
VCB = -10V , IE = 0A , f = 1MHz
36
pF
hFE Classification
AG
Marking
Rank
P
Q
hFE
82 180
120 270
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