Transistors SMD Type Power Transistor 2SA1797 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. +0.1 2.60-0.1 Complements the 2SA1797 and 2SC4672. +0.1 0.44-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 Excellent DC current gain characteristics. 1. Base +0.1 0.40-0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter Voltage Parameter VCEO -50 V Collector-base Voltage VCBO -50 V Emitter-base Voltage VEBO -6 V Collector current IC -3 A Collector power dissipation PC 0.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage BVCEO IC = -1mA -50 V Collector-base breakdown voltae BVCBO IC = -50 A -50 V Emitter-base breakdown voltage -6 V BVEBO IE = -50 A Collector cutoff current ICBO VCB = -50V -0.1 ìA Emitter cutoff current IEBO VEB = -5V -0.1 ìA -0.15 -0.35 V VCE(sat) IC = -1A , IB = -50mA Collector-Emitter Saturation Voltage DC current transfer ratio hFE Transition frequency fT Output Capacitance Cob VCE = -2V , IC = -0.5A 82 270 VCE = -2V , IE = 0.5A , f = 100MHz 200 MHz VCB = -10V , IE = 0A , f = 1MHz 36 pF hFE Classification AG Marking Rank P Q hFE 82 180 120 270 www.kexin.com.cn 1